Fig. 2: Common SiC polytypes and structure of a stacking fault in 4H-SiC.
From: Stabilization of point-defect spin qubits by quantum wells
a–c show the primitive cells, the stacking sequences, and the possible divacancy nonequivalent configurations in 4H, 6H, and 3C-SiC, respectively. Here, h and k stand for hexagonal-like and cubic-like environments of Si or C sites, respectively, and the double letters for the vacancy sites of the VSi–VC divacancy pair defect configurations. d A single stacking fault in a cubic-like stacking order in 4H-SiC. The close vicinity of the stacking fault resembles the 6H stacking and thus it gives rise to 6H-like additional divacancy configurations in 4H-SiC. The k2k2-ssf configuration is assigned to PL6 room-temperature qubits.
