Fig. 4: VNE in the monolayers WSe\({}_{2}\).
Sample A: a \({V}_{\mathrm{l}}^{\mathrm{s}}\) (Seebeck effect) and b \({V}^{\mathrm{a}}={V}_{\mathrm{l}}^{\mathrm{a}}+{V}_{\mathrm{t}}^{\mathrm{a}}\) (ISHE and Nernst-related effects) voltages as a function of the angle \({\theta }_{H}\); c Parallel (\({V}^{\mathrm{a}}={V}_{\mathrm{l}}^{\mathrm{a}}\), \({\theta }_{H}={0}^{\circ }\), ISHE) and perpendicular (\({V}^{\mathrm{a}}={V}_{\mathrm{t}}^{\mathrm{a}}\), \({\theta }_{H}=9{0}^{\circ }\), Nernst-related effects) configurations. Sample B: d \({V}_{\mathrm{l}}^{\mathrm{s}}\) and e \({V}^{\mathrm{a}}={V}_{\mathrm{l}}^{\mathrm{a}}+{V}_{\mathrm{t}}^{\mathrm{a}}\) as a function of the angle \({\theta }_{H}\); f Parallel (\({V}^{\mathrm{a}}={V}_{\mathrm{l}}^{\mathrm{a}}\), \({\theta }_{H}={0}^{\circ }\), ISHE) and perpendicular (\({V}^{\mathrm{a}}={V}_{\mathrm{t}}^{\mathrm{a}}\), \({\theta }_{H}=9{0}^{\circ }\), Nernst-related effects) configurations. The insets in b and e are optical images showing longitudinal distances of 1.3 and 0.3 mm between the contacts of the samples A and B, respectively and the dash-dotted lines are guide for the eye. The insets of a and d show the schematics of the stacks (color code: gray for SiC-graphene substrate, orange for WSe\({}_{2}\) and green for Al/NiFe/Al).
