Fig. 4: Temperature dependence of resistance in the MnTe device.
From: Reversible displacive transformation in MnTe polymorphic semiconductor
The initial state of the device was a low resistance state with an α-phase. The MnTe device was annealed up to about 359 °C and then cooled to room temperature (RT) (first heating/cooling cycle). The MnTe device was reheated up to 335 °C (second heating). The step decrease in resistance at around 160 °C in the second heating is due to the experimental error caused when the measuring range is switched from 106 to 105.
