Fig. 2: Evolution of 2DC/Au/SiO2 samples during annealing.
From: Enabling remote quantum emission in 2D semiconductors via porous metallic networks
a Series of AFM images from the same monolayer-WS2/Au region after different cumulative annealing times (Ar + H2, 300 °C; scale bar = 1 μm) (note: optical images of this region shown in Fig. 3d). b Outline of the pores inside the black ovals in a with increasing annealing time. c Plot showing the histogram peak value of the pore area vs. count for different cumulative annealing times (processed using ImageJ40). The solid lines are fits using the LSW particle-ripening model26. (inset) Full histograms of the pore area vs. count for different cumulative annealing times, along with the measured areal pore coverage for each annealing time. d Optical image showing a CVD graphene/Au/SiO2 sample that has been selectively treated with a 15 sec O2-plasma (scale bar = 40 μm). After annealing, the Au layer beneath pristine graphene dewets, while the Au beneath O2-plasma exposed graphene has limited dewetting (inset scale bar = 3 μm) e KPFM image of a MoS2/Au sample after annealing. The suspended MoS2 membranes can have up to a 300 mV potential difference compared to the Au-supported MoS2.
