Fig. 3: Calculations of charge transport on edge state of monolayer MoS2. | Nature Communications

Fig. 3: Calculations of charge transport on edge state of monolayer MoS2.

From: Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Fig. 3: Calculations of charge transport on edge state of monolayer MoS2.

a Schematic of monolayer MoS2 FET (Uppermost row); side view (Middle row) and top view (Lowest row) of monolayer MoS2. The isosurface plots for transmission eigenstates of the MoS2 channel at the k-point Γ(0,0) and the energy of 0.05 eV under the conditions of VDS = 0 V and VG = 0 V in b, and VDS = 0 V and VG = 0.5 V in c. The evolving of the carriers in bulk is revealed as highlighted by the red ellipse in b and c, although only a small gate voltage (0.5 V) is applied in simulation.

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