Fig. 4: SKPFM measurement of monolayer MoS2 FET.
a Optical image of the MoS2 FET device. The white rectangle region is the one selected for SKPFM measurement. b AFM image of the selected region. c Local potential map of the selected region at the bias voltage of VDS = 8 V and VG = 0 V. Line scans of the potential both across the edge (Line A) and the bulk (Line B) of the MoS2 flake. d Voltage potential comparison between the experimental data and simulation data. The experimental potential difference at the edge is 524 mV (Circles in Line A) and the difference at the bulk is 137 mV (Circles in Line B). The significant high potential at the edge indicates that charges flow at edge under the given bias voltage. The simulation results (Solid line) match well with the experimental results. e Simulated potential mapping of MoS2 channel based on the finite-element method, consistent with the experimental mapping in c.
