Fig. 3: Ferroelectric domain switching dynamics.
From: Sub-nanosecond memristor based on ferroelectric tunnel junction
a Resistances measured at 0.1 V and b relative area fraction of the ferroelectric up domain versus pulse duration. Inset of a illustrates the applied voltage pulse sequence. Solid curves in b are the fitting results by the NLS model. c Lorentzian distributions of switching time extracted from the fits in b at different pulse amplitudes. d Evolution of the mean switching time (tmean) as a function of the inverse of the electric field (1/|E|). The solid line is the fitting result by Merz’s law.
