Fig. 6: Temperature endurance of the FTJs.
From: Sub-nanosecond memristor based on ferroelectric tunnel junction
a Resistance switching with td = 600 ps at 358 K. b Retention characteristic of the corresponding resistance states in a. c retention time versus 1/kBT. The points are the experimental data at 423, 448, 473 and 498 K, and the solid line is the fitting result by Arrhenius relation.
