Fig. 4: Impact of the bias voltage on the defect-enabled XMR modes.
From: Defect-implantation for the all-electrical detection of non-collinear spin-textures
Dependence of the DXMR signal (green circle) and XMRdefect, (purple squares), on the atomic number of the a 3d and b 4d impurities at an injection energy eVbias = −1.27 eV. The gray dashed line indicates the signal of the XMRclean. Bias voltage dependence of the c DXMR and d XMRdefect signal for 3d and 4d defects. The color bars indicate the magnitude of the signal and the dashed green line shows the injection energy eVbias = 0.45 eV studied in Figs. 2 and 3.
