Fig. 5: IJP QLED characterizations.
From: High efficiency and stability of ink-jet printed quantum dot light emitting diodes
a Current–voltage–luminance characterization of Zn(OA)2-QDs vs. OA-QDs vs. ZnCl2-QDs devices; b external quantum efficiency of Zn(OA)2-QDs vs. OA-QDs vs. ZnCl2-QDs devices; c statistic chart of maximum external quantum efficiency of devices; d electroluminescent spectra of Zn(OA)2-QDs vs. OA-QDs vs. ZnCl2-QDs devices.
