Fig. 5: Device structure and OLED characteristics of Ir(III) complexes.
From: Ancillary ligand increases the efficiency of heteroleptic Ir-based triplet emitters in OLED devices
a Schematic diagram of the OLED device structure and the energy levels of each layer. b The current density–voltage–luminance curves of OLEDs. c EQEs as a function of the current density. d Maximum EQE normalized by horizontal transition dipole moment according to the PL quantum yield. Error bar for PL quantum yield indicates standard error of the mean (sample standard deviation divided by the square root of 6 measurements) and error bar for y-axis is standard error of the mean for 4 measurements.
