Fig. 3: Polarized optoelectronic responses for Te nanoflake devices.
From: Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature
a–c The net polarized photocurrent \(\Delta I_{\mathrm{p}}\) for the incident wavelengths of 0.52, 1.55, and 2.3 μm at room temperature, under the incident power of 6.0 mW, respectively. d–f Polarized photocurrent under 1.0 V drain bias and 0 V gate bias for the incident wavelengths of 0.52, 1.55, and 2.3 μm, respectively. The dots are experimental data, and the dashed lines are fitted curves based on sine curve. g–i Polar diagram of the polarized photoresponsivity under 1.0 V drain bias and 0 V gate bias for the incident wavelengths of 0.52, 1.55, and 2.3 μm, respectively, and the anisotropic ratio are 2.55, 2.39, and 7.58 for the three wavelengths, respectively.
