Fig. 3: Temperature/Ti-doping dependence of electronic structures.

a The band calculation of V_0.87Ti_0.13Te₂ in the normal phase along the high symmetry line (Γ-K-M-Γ). b The corresponding Fermi surface in the k_z = 0 plane. c ARPES image of V_0.90Ti_0.10Te₂ in the normal phase (350 K, marked as #1 in Fig. 1f) recorded on the high symmetry lines. The data are divided by the Fermi-Dirac function convoluted with the Gaussian resolution function, to eliminate the thermal broadening of the Fermi cutoff. The broken black curves are the guide for the band dispersions, obtained by tracking the peaks of the energy and momentum distribution curves. d Energy distribution curves along the \({\bar{\mathrm{M}}} - {\bar{\mathrm{K}}}\) line for c (integral width: 0.05 Å⁻¹). e ARPES image of V_0.90Ti_0.10Te₂ in the CDW phase (20 K, #2) for the same momentum region as c. The red and blue curves indicate the flat bands and dispersive band near the Fermi level, obtained in a similar manner with c. f Same as d, but for e (#2). g, h Same as e, f, but for the pristine VTe₂ in the CDW phase (15 K, #3). All the ARPES data in the figure were obtained using a He-discharge lamp (hν = 21.2 eV). The data in e–h include the signal from all the in-plane 120-degree CDW domains.