Fig. 1: Monolayer MoSe2/WS2 heterostructure device.
From: Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructure
a Optical microscopic image of the monolayer MoSe2/WS2 heterostructure, capped with a few-layer h-BN layer. Scale bar: 5 µm. b Schematic of the MoSe2/WS2 heterostructure device, contacted by few-layer graphene electrodes and gated by the ionic substrate LaF3. c Typical room temperature PL spectra from regions of the monolayer MoSe2 (black), monolayer WS2 (blue), and MoSe2/WS2 heterojunction (red), with no gate voltage applied. Inset: schematic representation of the type II band alignment of the MoSe2/WS2 heterostructure.
