Fig. 2: Gate voltage-tunable transition from PL quenching to PL enhancement in the MoSe2/WS2 heterojunction.
From: Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructure
a The color plot of the PL spectra for monolayer MoSe2 and b the color plot of the PL spectra for MoSe2/WS2 heterostructure region as a function of the gate voltage, under the continuous wave (CW) photoexcitation centered at 2.0 eV and with the excitation power of 100 µW. The color represents the integrated PL intensity at MoSe2 A exciton resonance. All spectra were taken at room temperature. c, d are PL spectra of the monolayer MoSe2 (black) and MoSe2/WS2 heterojunction (red) under the CW photoexcitation centered at 1.797 and 2.0 eV, respectively. The excitation power for both c and d is 100 µW. e The experimentally extracted PL enhancement factor as a function of the gate voltage for the photoexcitation centered at 2.0 eV (black dots) and 1.797 eV (red dots).
