Fig. 4: Theoretical understanding of the PL quenching to PL enhancement transition.
From: Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructure
The enhancement factor as a function of the gate voltage clearly exhibits three distinct regions. Schematics of band alignment of the MoSe2/WS2 heterojunction, along with the Fermi energy level (dashed line), are labeled for different points to explain the different PL enhancement factor behaviors. Inset: schematic of the effective capacitance circuit of the MoSe2/WS2 heterojunction with the device configuration shown in Fig. 1b.
