Fig. 1: SEM analysis of U3Si2 and SiC.
From: Understanding the interface interaction between U3Si2 fuel and SiC cladding
Polished cross-section of the U3Si2 and SiC surfaces after exposure at 1200 °C for: (a) 10 h, and (b) 100 h. The depth of Si diffusion into the U3Si2 can be seen in the formation of U3Si5 well below the surface.
