Fig. 8: Temperature-dependent in-plane resistivity.
From: A foundation for complex oxide electronics -low temperature perovskite epitaxy
Temperature dependence of the SrTiO3(100)||LaNiO3(100)pc film in-plane resistivity as measured by four-point PPMS measurements. The temperature was swept from RT to 6 K by means of liquid He, and the resistivity was measured for every 2 K. The small bump around 50 and 180 K is likely a result of deteriorating surface adhesion of the sputtered gold contact. The blue dashed line corresponds to a linear combination of polynomials based on Matthiessen’s rule, given by the polynomial \(\rho \left( T \right) = 27.6 + 0.012T^2 + 2.02 \cdot 10^{ - 5}T^3 + 4.09 \cdot 10^{ - 12}T^5\).
