Fig. 9: Example architecture of complex oxide field effect transistor.
From: A foundation for complex oxide electronics -low temperature perovskite epitaxy
Example of architecture for a layered all-oxide COFET using metallic LaNiO3 as source, drain and gate, and SrTiO3 as the gate oxide. The choice of channel material is still an open question and will depend on the device, but recent literature suggests e.g. SmNiO3 for multilevel memristive devices39,40,41.
