Fig. 1: Thin films produced through powder abrasion.
From: Heterostructures formed through abraded van der Waals materials
a Fabrication routes used to produce heterostructures through mechanical abrasion of vdW powders via a direct write method. b STEM-EDS elemental mapping of an abraded vertical heterostructure (scale bar = 400 nm). c Left: An example of multilayered vertical junction photodetectors based on a graphite–WS2–graphite architecture produced via fabrication route 1. Right: The same architecture as the left micrograph but this time following fabrication route two, with the top graphitic electrode transferred from PMGI, which leads to a higher device yield. d Gate dependence of the channel sheet resistance for a tape thinned graphitic channel using a LiClO3 electrolyte (scale bar = 2.5 cm). Top left inset: Contour map of the Isd–Vsd for different applied gate voltages. Bottom right inset: Optical image of the device. e Typical I–Vb for a 5 mm × 0.025 mm two terminal planar device based on WS2 films with a mean film thickness of 1 μm for different levels of applied uniaxial tensile strain. Inset: Vb is held at 0.5 V and the device is subjected to reversible uniaxial tensile strain. f Impedance spectroscopy for a hBN dielectric capacitor produced using a 5 μm thick hBN film.
