Fig. 1: Device operation, material and substrate characterization of monolayer MoS2 on Li-ion glass. | Nature Communications

Fig. 1: Device operation, material and substrate characterization of monolayer MoS2 on Li-ion glass.

From: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Fig. 1

Schematic illustration of the working principle of a solid dielectric-gated FET, b ion gel-gated FET and, c Li-ion glass-gated FET. The sketches are shown for positive gate bias. The circles and the arrows in the connection schemes represent the bias and ground, respectively. d Raman spectrum of the monolayer CVD MoS2 transferred onto glass substrate. Inset shows dark-field optical micrograph of the transferred CVD MoS2. The boundary of the flake is marked with white dash-dotted lines to aid visualization. Scale bar is 10 µm. e Photoluminescence spectrum of the same flake. f Capacitance/Phase angle vs. frequency of Li-ion glass substrate with Ni (20 nm) as both top and bottom electrode. The frequency spectrum can be divided into three distinct regions: (i) R1 where the EDL is formed, (ii) R2 where ion migration dominates, and (iii) R3 where the bulk Li-ion glass works as a dielectric.

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