Fig. 4: CMOS inverter based on n-type MoS2 and p-type WSe2 FETs. | Nature Communications

Fig. 4: CMOS inverter based on n-type MoS2 and p-type WSe2 FETs.

From: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Fig. 4

a Schematic of a CMOS inverter with the drain of p-WSe2 FET connected to the drain of n-MoS2 FET. Transfer characteristics of b n-type MoS2 FET. VTH is ~0.25 V. c p-type WSe2 FET. VTH is ~−0.50 V. d Output vs input voltage characteristics of the inverter. The mid-point voltage VM is 0.38 V. Noise margin high (NMH) and low (NML) as calculated from the graph are 0.56 V and 0.27 V, respectively. e Voltage gain vs. input voltage curve with a maximum gain of ~34 at VIN = 0.37 V. f DC gain vs. supply voltage (VDD) of our n-MoS2/p-WSe2 CMOS inverter (red) along with other CMOS inverters from the literature such as n-MoS2/p-MoTe2 (blue)60, n-MoTe2/ p-MoTe2 (orange)61, n-MoS2/p-MoS2 (magenta)62, n-WSe2/ p-WSe2 (violet)63, and n-MoTe2/ p-MoTe2 (green)64.

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