Fig. 5: MIM measurement of MoS2 FET. | Nature Communications

Fig. 5: MIM measurement of MoS2 FET.

From: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Fig. 5

a Schematic diagram of the device and the tuning-fork-based MIM setup. The 1-GHz microwave signal is guided to the tip through an impedance match section, and the reflected signal is detected by the MIM electronics. The carrier density is tuned by the back-gate voltage VBG. b Transfer characteristics of the MoS2 FET (L = 6 µm) for VDS = 100 mV. Inset: Output characteristics for gate voltages from 0.60 V to 1.20 V in steps of 200 mV. c Optical image of the device, where white dashed lines show the channel boundary and the blue dotted line shows the section of the channel where MIM is performed. Inset shows MIM map of the selected channel region. Scale bar is 5 µm. d Sheet conductance map in a section of the FET channel at different gate voltages. The color scale represents the common logarithm of sheet conductance in S/◻. All scale bars are 500 nm.

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