Table 2 Simulated device performances depending on grain boundary recombination velocity.
From: Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells
SGB (cm s−1) | Voc (mV) | jsc (mA cm−2) | FF (%) | η (%) |
|---|---|---|---|---|
0 (and 0 meV band bending) | 771 | 36.8 | 82 | 23.3 |
0 | 772–771 | 36.8 | 82 | 23.4–23.3 |
50 | 771–765 | 36.8–36.7 | 82 | 23.3–23.1 |
100 | 770–759 | 36.8–36.7 | 82 | 23.3–22.9 |
200 | 768–751 | 36.7 | 82 | 23.2–22.5 |
500 | 763–736 | 36.7–36.6 | 82–81 | 23.0–21.9 |
1000 | 756–721 | 36.7–36.5 | 82–81 | 22.8–21.2 |
2000 | 746–705 | 36.6–36.2 | 82–80 | 22.4–20.4 |
5000 | 729–684 | 36.5–35.6 | 82–79 | 21.7–19.1 |
