Table 3 EcMscS and AtMSL1 and A320V have similar conductances and relative gating pressures.

From: Structural mechanism for gating of a eukaryotic mechanosensitive channel of small conductance

 

EcMscS

AtMSL1

AtMSL1 A320V

Conductance (nS)

1.02 ± 0.17

1.12 ± 0.16

0.98 ± 0.12

Relative gating pressure (Px/PMscL)

0.49 ± 0.16

0.63 ± 0.14

0.55 ± 0.15

  1. Channel activities were triggered by application of 2.5 s symmetric pressure ramps at membrane potentials of −70 mV. Values are averages ± standard deviation. No difference in conductance or gating pressure relative to endogenous EcMscL was observed between wild-type AtMSL1 and A320V using one-way ANOVA followed by post hoc Tukey’s test, p < 0.05. N = 10 patches per variant. Source data are provided as a Source Data file.
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