Fig. 3: Voltage-controlled effective magnetization, line-width, and damping constant.
From: Giant voltage-controlled modulation of spin Hall nano-oscillator damping
a Typical ST-FMR spectra recorded at a frequency of 7 GHz for different gate voltages. The red solid lines are fits to a sum of symmetric and anti-symmetric Lorentzian functions. b Gate voltage dependence of the effective magnetization μ0Meff extracted from Kittel fits (Eq. (1)) to ST-FMR data in the thin-film approximation. c Extracted line-width (HWHM) vs. resonance frequency for each gate voltage along with linear fits shown by solid lines. d Variation of the effective damping constant α with gate voltage obtained from the experiment (blue) and simulation (red) displaying a strong linear dependence. e Spatial distribution of the excited linear modes normalized by their maximum amplitude displaying stronger localization at VG = +1 V (right panel) relative to the one at VG =−3 V (left panel). The middle panel shows their corresponding amplitude difference. All error bars indicate the standard error obtained from fitting the experimental data.
