Fig. 4: Tunability of the dynamical mode localization with gate voltage.
From: Giant voltage-controlled modulation of spin Hall nano-oscillator damping
Plots of the current-dependent ST-FMR line-widths, for positive field direction, at two representative frequencies af = 6 GHz and bf = 12 GHz and five different gate voltages. Solid lines are linear fits to the data displaying a minor change in slope with gate voltage. c, d Variation of extracted slopes with gate voltage indicating the pronounced mode localization at +1 V and weaker localization at −3 V. Red dashed lines are linear fits to extracted data. All error bars indicate the standard error obtained from fitting the experimental data.
