Fig. 5: Temperature-dependent XRD study and schematic depictions of band evolution.
From: Band insulator to Mott insulator transition in 1T-TaS2
a XRD intensity of 1T-TaS2 measured along c axis at 120 and 300 K. Inset panels show the emergence of (0, 0, 5/2) and (0, 0, 7/2) peaks using 1100 times expanded scales. All the other peaks are from the polycrystalline substrate (Supplementary Fig. 4). b Temperature-dependence of the (0, 0, 7/2) and (0, 0, 4) peaks upon heating. c Schematic illustration of the interlayer dimerization. d Schematic illustration of the density of state distributions in different electronic phases. e Schematic illustration of the band dispersions along kz direction in different electronic phases.
