Fig. 6: Accuracy of committee machines when using Ta2O5 devices.
From: Committee machines—a universal method to deal with non-idealities in memristor-based neural networks
Accuracy achieved by individual networks and their committees when RTN data of a Ta2O5 device are taken into account. Additionally, interconnect resistance of 0.35 Ω and 0.32 Ω in the word and bit lines, respectively, (from Ta/HfO2 array) was used to include line resistance effects. The maximum whisker length is set to 1.5 × IQR.
