Fig. 3: Induced magnetization in monolayer graphene.
From: Probing magnetism in atomically thin semiconducting PtSe2
a VBG dependence of graphene resistance. Red (blue) line represents the device with (without) a monolayer PtSe2 on top of the graphene channel, between the voltage probes. Inset is the schematics of the measurement geometry. b Magnetic field dependence of pristine graphene resistance measured at T = 1.6 K. c Magnetic field dependence of graphene resistance measured at T = 1.6 K for the device with monolayer PtSe2 on the channel. Inset shows the magnetic field response of vertically measured monolayer PtSe2 (red circles) and laterally measured graphene/monolayer PtSe2 (blue circles). They have similar out-of-plane coercive fields. d Magnetic field dependence of graphene resistance measured at T = 1.6 K for the device with a bilayer PtSe2 on the graphene channel. Arrows represent magnetic field sweep directions.
