Fig. 1: Device structure and characterization.
From: Vertical organic permeable dual-base transistors for logic circuits
a Structure schematic view of an OPDBT measured using common-emitter configuration, and cross-section TEM image of an OPDBT. b SEM image of a 15-nm-thick Al covered on a C60 layer after oxidation in ambient air. c Optical image of the active area in an OPDBT. The active area Aact is defined by the overlap of four electrodes: the emitter (E), base1 (B1), base2 (B2), and collector (C). An insulating layer of SiO is used to confine the active area. The current flow happens in an effective region of 250 µm × 250 µm. d Photograph of our OPDBTs on a glass substrate (edge length: 1 in.), including four active OPDBT pixels. With applied base1-emitter voltages (VB1) and base2-emitter voltages (VB2), electrons can pass through the base and hence reach the collector (a). Except for a minor leakage current into the bases IB1 and IB2 (blue dotted arrows), the emitter current IE (solid blue arrow) can finally arrive at the collector, forming the collector current IC.
