Fig. 4: TCAD simulation of OPDBTs.
From: Vertical organic permeable dual-base transistors for logic circuits
a Schematic cross-section of the simulated OPDBT used for Sentaurus TCAD setup. b 3D-OPDBT structure depicting simulated charge density of the same number of pinholes in base1 and base2 NPin1 = NPin2 = 9, with the emitter being bottom contact and collector the top contact at VB1 = VB2 = VC = 2.0 V. c Transfer characteristics: Collector current IC from experimental data (diamonds) compared with data from TCAD simulation (solid lines), including the negligible measured base2 leakage current IB2 (circles) at VB1 = VC = 2.0 V. d–f Electrostatic potential (d), charge carrier density (e), and current density (f) profiles of OPDBTs at VB1 = VC = 2.0 V and VB2 = 0.5, 1.0, 1.5, and 2.0 V, respectively.
