Fig. 3: Dynamic response evaluated by S-parameter measurements. | Nature Communications

Fig. 3: Dynamic response evaluated by S-parameter measurements.

From: Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

Fig. 3

a Top-view microscopy image of the dual-channel OFET used for the full two-port scattering S-parameter measurements. b Schematic diagram of the full two-port scattering S-parameter measurements. c Dependence of the full S-parameters on frequency (f) for the OFET with L = 1.5 μm and LC = 1 μm. The current gain as a function of f was evaluated from Eq. (5), as described in the “Methods” section). d A typical example of the current gain as a function of f. fT is defined as the frequency at which the current gain is zero (20\(\mathrm{log}\,| {h}_{{\rm{21}}}| =0\), equivalently ∣h21∣ = 1).

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