Fig. 2: Design and electrical characterization of planar heterojunction structure.
From: Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
a Sketch of the sample. b Photography (scale bar: 5 mm) of as-prepared devices with magnified view (scale bar: 0.5 mm) of the p- and n-type contact pads, respectively. c I–V characteristics of the hybrid n-GaN/PEDOT heterojunctions. Minor differences from the original performance (black) occur after either heating to 423 K and cooling back to 293 K (red) or 113 weeks of aging at ambient conditions in the dark (blue). The overall forward current density is limited by the series resistance of n-GaN as determined by I–V measurements of Au/Ti/n-GaN/Ti/Au structures (green). d Determination of the breakdown voltage, soft (black) and hard (red) breakdown occur at −7.8 and −10.8 V, respectively.
