Fig. 3: Effects of the ALD treatment on FET stability and performance.
From: Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots
a Measurements of air stability of charge-transport characteristics (inferred from changes in the electron mobility) of n-channel devices before (blue circles) and after (red circles) encapsulation in Al2O3 using atomic layer deposition (ALD). Inset is the magnified view of the first 30 min of the degradation test for the device without ALD Al2O3. b The output characteristics of the n-channel In-contact ALD-treated FET made of iodide-capped CuInSe2 CQDs. c Same for the p-channel Au-contact ALD-treated FET. Source data are provided as a Source Data file.
