Fig. 3: Disordered G/h-BN junctions and their electronic properties.
From: Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN
a Local density of state projected over all the sites at the graphene/h-BN interface for three different polycrystalline samples with 10 nm, 20 nm and 40 nm average grain size. As reference, dotted line corresponds to the density of states of a polycrystalline h-BN sample to show the energy location of the band gap. b, c Local density of states of each site in a disordered interface at 2.0 eV and −1.2 eV, respectively. It is clear that local density of states is higher at the structural defects of the interface. The units used are arbitrary. d, e Annular dark-field (ADF) STEM image showing a boundary between graphene and h-BN domains (top and bottom, respectively). Blue and orange circles denote 5- and 7-membered rings, respectively. The bright impurity atom found in the red box of e is identified as silicon by EELS, probably coming from the sample transfer process. f STEM-EELS elemental maps of boron, carbon, nitrogen and a possible structure model for the area indicated by a red square in e.
