Fig. 4: Stimuli responsive conductivity of Mo2(INA)4 single-crystal devices.
a Optical images collected during measurement of a device fabricated on a single crystal of 1. The crystal boundary is highlighted by the dashed gold box and the bright diffraction-limited laser spot is evident in the right image. Scale: 5 µm. b Current–voltage characteristics of a single-crystal device of 1 (yellow) and of a single-crystal device of 2 (blue) prepared through exposure to DMA. c Photocurrent generated by a single-crystal device of 1 when illuminated with a 526 nm laser at 1.29, 1.99, 2.76, 3.45, and 4.14 mW. The device source-drain bias was held constant at 20 V. Error bars denote standard deviation. d Photocurrent switching behavior of a single-crystal device of 1 subjected to periodic laser illumination at 5-s intervals (green highlighted regions). Device switching behavior was assessed at 1.29 mW (red), 1.99 mW (orange), 2.76 mW (green), 3.45 mW (blue), and 4.14 mW (purple).
