Fig. 3: Ag atomic threshold-switching (Ag/HfO2-based TS).
From: Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
a Typical I–V characteristic of the TS device at a compliance current (Icc) of 100 nA in forward (green)/reverse (grey) voltage sweeping, exhibiting ultralow leakage currents (<1 pA). b Energy-dispersive X-ray spectroscopy (EDS) line profiles (including Ag, Hf, and O elements) of the TS stack layers along the red line shown in a cross-sectional high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image. Scale bar: 10 nm. c Simulation for the formation and rupture procedures (on/off) of the atomic Ag filament in the TS device with an applied voltage of 0.4 V.
