Fig. 4: Schematic of the charge transfer between the TI and magnetic TI layers and calculated band structures and Berry curvature distribution of the magnetic TI films under various electric fields.

a Schematic of the charge transfer through the interface between the Sb₂Te₃ and V-doped Sb₂Te₃ layers. The V-doped Sb₂Te₃ layer has more hole carries than the Sb₂Te₃ layer. A built-in electric field is generated at the Sb₂Te₃/V-doped Sb₂Te₃ interface. b, d, f, h The calculated band structures (left) and corresponding Hall conductance σ_xy (right) of 5 QL Sb_1.9V_0.1Te₃ films under electric field E = 0 V/Å (b), E = 0.0005 V/Å (d), E = 0.001 V/Å (f), and E = 0.0015 V/Å (h). c, e, g, i The calculated Berry curvature distribution of 5 QL Sb_1.9V_0.1Te₃ under electric field E = 0 V/Å (c), E = 0.0005 V/Å (e), E = 0.001 V/Å (g), and E = 0.0015 V/Å (i). The chemical potential positions are slightly shifted (−30 to 0 to 42 meV) to simulate the influence induced by the charge transfer and/or the gating effect in experiments.