Table 3 Benchmarking ON-state performance at VDS = 1 V (best values are compared with median/mean values shown within parentheses).
From: Benchmarking monolayer MoS2 and WS2 field-effect transistors
μ(cm2 V−1 s−1) | Rc(kΩ−μm) | ION(μA.μm−1) | nS(cm−2) | |
|---|---|---|---|---|
25—MoS2 | \(\mu _{g_{\mathrm{m}}}\) = 42 (34.2) | 0.73 (1) | 22, LCH = 5.4 μm | 1.3 × 1013 |
22—MoS2 | μTLM = 20 | 6.5 | 270, LCH = 80 nm | 1 × 1013 |
12—MoS2 | \(\mu _{g_{\mathrm{m}}}\) = 80 (≈40) | 2.4 | 13, LCH = 4 μm | 6.6 × 1012 |
65—MoS2 | μTLM = 30 | 1.7 | 260, LCH = 10 nm | 4.7 × 1013 |
7—MoS2 | μTLM = 15 | 1 | 250, LCH = 29 nm | 1.5 × 1013 |
26—MoS2 | μ4-point ≈ 75 (70) | 14 | – | – |
Our work-MoS2 | μTLM = 47 (27) | 3(9.2) | 73 (54), LCH = 100 nm | 1 × 1013 |
64—WS2 | \(\mu _{g_{\mathrm{m}}}\) = 11 | – | 25, LCH = 4 μm | 2.1 × 1013 |
47—WS2 | \(\mu _{g_{\mathrm{m}}}\) = 20.4 | – | 0.6, LCH = 1 μm | 2.5 × 1012 |
50—WS2 | \(\mu _{g_{\mathrm{m}}}\) = 5 | – | ≈0.05, LCH = 10 μm | ≈7.2 × 1012 |
50—WS2 (Graphene contact) | \(\mu _{g_{\mathrm{m}}}\) = 50 (27) | – | ≈1.1, LCH = 10 μm | ≈7.2 × 1012 |
Our work-WS2 | μTLM = 33 (16) | 2.1 (29) | 26 (17), LCH = 100 nm | 4.4 × 1012 |
51—UTB SOI | μ4-point = 6 | – | ≈35 * 10−3, LCH = 100 μm | ≈9 × 1012 |
