Fig. 1: Point defect properties of GeSe.
From: An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics
a Crystal structure of GeSe. b Calculated bandstructure, density of states (DOS), and partial DOS projected on different elements of GeSe. c Schematic energy level diagram of the interactions in GeSe. d Arrhenius plots obtained from DLTS experiments. The solid lines represent the best fits to experimental data. Calculated formation energies of intrinsic point defects in GeSe under e Se-rich and f Ge-rich conditions as a function of the Fermi energy.
