Fig. 3: Transport characteristic of Nb/GeTe-nanowire/Nb junction at zero magnetic field.
From: Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
a Resistance R of a Nb/GeTe-nanowire/Nb junction during a cooling process. There are two transitions (Tc,Nb and Tc,NW) labeled by vertical shadows. Inset: A scanning electron microscopy image of a Nb/GeTe-nanowire/Nb junction. b I–V characteristics and corresponding dV/dI trace of a GeTe-based junction in a high bias current range at 0.4 K. The subgap features at 2Δ0/3 and Δ0 as well as the location of 2Δ0 are indicated by arrows. Furthermore, an additional sharp feature is found at (1). c I–V curves as a function of large bias current range. The superconducting range at small bias currents is indicated by an rectangle and the step feature at around ±1.5 μA can be found within the ellipse. d Corresponding dV/dI traces as a function of bias voltage at various temperatures. Inset: Position as a function of temperature of the peak assigned feature (1) indicated in b. e I–V characteristics and f the corresponding dV/dI curves in a small bias current range at temperatures between 0.4 and 1.6 K. The inset of e is the experimental (dots) and fit (solid line) Ic/Ic(0) as a function of temperature.
