Fig. 3: Simulations of soliton generation with gain-switched laser driving.
From: Gain-switched semiconductor laser driven soliton microcombs
a Comb spectrum and b pulse intensity and phase of the gain-switched laser when the master laser is injected into the centre of the lasing mode at 1549 nm. The red dashed line indicates the position of the master laser injection. c Intracavity intensity evolution of a Si3N4 microring resonator driven by the GSL pulse in (b). MI modulation instability. The inset shows the microcomb spectrum evolution. d Comb spectrum of the gain-switched laser that is offset-injection-locked. The master laser frequency is detuned from the centre of the intrinsic lasing mode by −160 GHz. e Intensity and phase of the offset-injection-locked GSL pulse. The blue dashed line indicates the phase maximum that has the highest field amplitude. f Intracavity intensity evolution of the microring resonator that is pumped by the pulse in (e), showing a single-soliton step with a width of ~20 MHz yielded by a soliton trapped at the phase maximum that is indicated by the dashed line in (e).
