Fig. 4: Generalization of performance optimization strategy of thickening Schottky barrier width.
From: Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
a–d Gate-dependent rectifying ratios of the Pd/MoS2 (a), 1T-PtSe2/MoS2 (b), 1T′-MoTe2/WS2 (c), and 1T-PtSe2/WS2 (d) metal-semiconductor diodes extracted from Supplementary Fig. 11 before and after the SVSH. It should be noted that both 1T′-MoTe2 and 1T-PtSe2 are multilayer over 10 nm and behave metallic characteristics to the only function as electrodes.
