Fig. 5: Photoresponse optimization of the 1T′-MoTe2/MoS2 Schottky junction photodiodes.
From: Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
a Output curves of the 1T′-MoTe2/healed MoS2 and 1T′-MoTe2/as-prepared MoS2 (inset) Schottky junctions in dark and under 532 nm light irradiation with various laser power densities (PLaser). The gate voltages before and after the SVSH are zero. b Short circuit current (ISC) and open-circuit voltage (VOC) as a function of PLaser extracted from (a). c Output electrical power of the as-prepared (left) and healed (right) devices as a function of drain-source voltage. d PLaser-dependent photoresponsivities (red) and EQE (blue) at zero bias. e, f Band structure diagrams of the 1T′-MoTe2/MoS2 Schottky junctions before (e) and after (f) the SVSH under light irradiation. The purple and hollow circles represent electrons and holes, respectively. The red dashed arrow refers to the electron movement direction. The yellow and blue gradient areas refer to the depletion regions of the Schottky junctions. WLight-eff refers to the efficient light absorption width of the Schottky junction.
