Fig. 1: Active material and nanotrench device fabrication.
From: Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays
a Infrared absorption spectrum of HgTe nanocrystals (NCs) used in this study. The narrow line at 2900 cm−1 is due to the C–H bond from the capping ligands. b Transmission electron microscopy image of HgTe NCs. The scale bar is 50 nm. The top inset is a high resolution zoom on a HgTe NC. The scale bar is 10 nm. c Sketch of the main step of fabrication leading to nanotrench electrodes: tilted evaporation. Bottom sketch is a scheme of the final device. The red rectangle highlight the nanotrench area. d Scanning electron microscopy image of 85-nm nanogap in between nanotrench electrodes. The scale bar is 200 nm.
