Fig. 2: Electric field tuning of tDBLG electronic structure.
From: Visualizing delocalized correlated electronic states in twisted double bilayer graphene
a dI/dV spectra measured in an ABAB region under different back-gate voltages (modulation voltage VRMS = 1 mV; initial VBias = –100 mV, I0 = 0.5 nA). b Theoretical LDOS for ABAB region for gate voltages in a (corresponding E-field values are shown). The dashed curves denote contributions from each separate flat band. c–e Single-particle band structure along the high symmetry directions of the tDBLG moiré Brillouin zone for c VG = 0, E = 0; d VG = 27 V, E = 0.15 V/nm; and e VG = 60 V, E = 0.33 V/nm. For clarity only bands from a single valley are shown. CFB conduction flat band, VFB valence flat band.
