Fig. 4: Gate-dependent dI/dV spectroscopy for three different stacking regions.
From: Visualizing delocalized correlated electronic states in twisted double bilayer graphene
a–c dI/dV spectra for three stacking regions for VG = 45 V (ν = 4). d–f Gate-dependent dI/dV density plot for three stacking regions over gate-voltage range –60 V < VG < 60 V. The vertical black dashed line denotes zero bias (the Fermi level). The black dashed box highlights correlation-driven splitting of the CFB peak near ν ≈ 2. g–i dI/dV spectra for three stacking regions for VG = –45 V (ν = –4). Spectroscopy parameters: modulation voltage VRMS = 1 mV; initial VBias = –100 mV, I0 = 0.5 nA. CFB conduction flat band, VFB valence flat band, RCB remote conduction band, RVB remote valence band.
