Fig. 4: Evidence for correlated insulating states at half filling of the conduction band.
From: Spectroscopy of a tunable moiré system with a correlated and topological flat band
a High-resolution gate-dependent spectra in the first area with \(\theta\) = 1.48°, taken near the ABAB stacking configuration with Vset = −400 mV, Iset = 800 pA and Vmod = 0.5 mV. There is a clear jump of vHs near the half filling of the conduction band. Top inset, zoom-in around the half filling and zero bias, revealing a small dip in tunneling conductance at zero bias near half filling. Bottom inset, a zoom-in of Supplementary Fig. 2, showing a more pronounced gap near half filling. b, c High-resolution maps showing similar jumps of vHs in different areas of the sample with twist angles 1.47° and 1.43°, also taken with Vmod = 0.5 mV. d–f Traces of vHs peaks over silicon gate voltages in three different areas. The magnitude of the jump \(\triangle\) in each area is extracted.
