Table 1 Summary of germanium and silicon annealing conditions and results for fibres made by high pressure chemical vapour deposition (HPCVD), pressure-assisted melt filling (PAMF) and molten core drawing (MCD).
From: Semiconductor core fibres: materials science in a bottle
| Â | Ref | Fabrication | Core diam | Anneal method | Crystal length | Anneal speed | T gradient |
|---|---|---|---|---|---|---|---|
Ge | HPCVD | 5 μm |  | 11 mm |  |  | |
|  | HPCVD | 5.6 μm | 488 nm Ar laser | 9 mm | 1 mm s−1 |  | |
|  | PAMF | 2 μm | 10.6 μm CO2 laser | 8 mm (stage limit) | 2 mm s−1 |  | |
|  | MCD | 8 μm | taper | 2–4 mm | 2 mm s−1 | 600 K cm−1 | |
|  | MCD | 3–60 μm | CO2 3-beam |  | 3 mm s−1 |  | |
Si | HPCVD | 2–5 μm | 488 nm Ar laser | 5.1 mm | 1 mm s−1 | 4000 K cm−1 | |
|  | MCD | 160 μm | xenon lamp | 9 mm | ~ |  | |
|  | MCD | 12 μm | 10.6 μm CO2 laser | 2.5 cm (stage limit) | 0.1–3 mm s−1 | 12000 K cm−1 | |
|  | MCD | 2 μm | taper | 9.2 mm | 0.4–0.45 mm s−1 |  |
